LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION

被引：23

作者：

JUNG, TG ^{[1
]}

CHANG, CY ^{[1
]}

CHANG, TC ^{[1
]}

LIN, HC ^{[1
]}

WANG, T ^{[1
]}

TSAI, WC ^{[1
]}

HUANG, GW ^{[1
]}

WANG, PJ ^{[1
]}

机构：

[1] NATL NANO DEVICE LAB,HSINCHU,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1A期

关键词：

SI1-XGEX; LOW-TEMPERATURE EPITAXY; HYDROGEN PASSIVATION; STRAINED-LAYER SUPERLATTICES; BISTABLE EPITAXIAL GROWTH;

D O I：

10.1143/JJAP.33.240

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature epitaxy of silicon and silicon-germanium alloy via an ultrahigh-vacuum chemical vapor deposition system was investigated. Bistable conditions were observed for silicon epitaxial growth performed within the temperature range of 550 degrees C to 800 degrees C. The activation energy of the SiGe growth rate was found to decrease as the germanium composition increased. The germanium atomic molar fraction in these epitaxial layers was tightly controlled by a computer-controlled gas source switching system. Si/SiGe superlattice structures of 20-period 5 nm Si/12 nm SiGe layers were grown to demonstrate the excellent controllability of this growth technique.

引用

页码：240 / 246

页数：7

共 19 条

[1]

CHANG TC, IN PRESS J APPL PHYS

[2]

CHERN CH, 1993, J VAC SCI TECHNOL B, V10, P937

[3] SILICON VAPOR-PHASE EPITAXIAL-GROWTH CATALYSIS BY THE PRESENCE OF GERMANE [J].