THE ROLE OF EXCESS ARSENIC DURING THE METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS FROM TRIMETHYLGALLIUM AND AS2

被引：5

作者：

KANEKO, T ^{[1
]}

NAJI, O ^{[1
]}

JONES, TS ^{[1
]}

JOYCE, BA ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT CHEM,LONDON SW7 2BZ,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 136卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90390-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The availability of active arsenic sites for the decomposition of trimethylgallium (TMGa) during the MOMBE (metalorganic molecular beam epitaxy) growth of GaAs using As2 has been investigated using RHEED (reflection high electron energy diffraction) intensity oscillations. Changes in the oscillation period are observed at low effective V/III flux ratios at substrate temperatures between 500 and 580-degrees-C. The period immediately following the initiation of growth is shorter than the period in the latter part when steady state is achieved. These results indicate that the TMGa decomposition efficiency is strongly affected by the surface chemistry induced by excess arsenic.

引用

页码：99 / 103

页数：5

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