ELECTRONIC SURFACE STATES AND THE CLEANED GERMANIUM SURFACE

被引：48

作者：

HANDLER, P

PORTNOY, WM

机构：

来源：

PHYSICAL REVIEW | 1959年 / 116卷 / 03期

关键词：

D O I：

10.1103/PhysRev.116.516

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：516 / 526

页数：11

相关论文

共 45 条

[1] VARIATION OF CONTACT POTENTIAL WITH CRYSTAL FACE FOR GERMANIUM
ALLEN, FG
FOWLER, AB
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (1-2) : 107 - 114
[2] WORK-FUNCTION STUDIES OF GERMANIUM CRYSTALS CLEANED BY ION BOMBARDMENT
DILLON, JA
FARNSWORTH, HE
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (02) : 174 - 184
[3] ELECTRICAL PROPERTIES OF HYDROGEN ADSORBED ON SILICON
EISINGER, J
[J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) : 927 - 930
[4] PROPERTIES OF HYDROGEN CHEMISORBED ON TUNGSTEN
EISINGER, J
[J]. JOURNAL OF CHEMICAL PHYSICS, 1958, 29 (05) : 1154 - 1160
[5] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION
FARNSWORTH, HE
SCHLIER, RE
GEORGE, TH
BURGER, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1150 - 1161
[6] ION BOMBARDMENT-CLEANING OF GERMANIUM AND TITANIUM AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION
FARNSWORTH, HE
SCHLIER, RE
GEORGE, TH
BURGER, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) : 252 - 253
[7] FORMAN R, 1959, B AM PHYS SOC 2, V4, P26
[8] CONTACT POTENTIAL MEASUREMENTS ON CLEANED GERMANIUM SURFACES
FOWLER, AB
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 556 - 558
[9] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES
GARRETT, CGB
BRATTAIN, WH
[J]. PHYSICAL REVIEW, 1955, 99 (02): : 376 - 387
[10] Goodwin ET, 1939, P CAMB PHILOS SOC, V35, P232

← 1 2 3 4 5 →