INFLUENCE OF THE BARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS ALGAAS QUANTUM WELL LASERS

被引：35

作者：

BLOOD, P ^{[1
]}

FLETCHER, ED ^{[1
]}

WOODBRIDGE, K ^{[1
]}

HEASMAN, KC ^{[1
]}

ADAMS, AR ^{[1
]}

机构：

[1] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 06期

关键词：

D O I：

10.1109/3.29281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1459 / 1468

页数：10

相关论文

共 30 条

[21] PRESSURE-DEPENDENCE OF THRESHOLD CURRENT IN GAXIN1-XASYP1-Y LASERS
PATEL, D
ADAMS, AR
GREENE, PD
HENSHALL, GD
[J]. ELECTRONICS LETTERS, 1982, 18 (12) : 527 - 528
[22] THE K.P INTERACTION IN INP AND GAAS FROM THE BAND-GAP DEPENDENCE OF THE EFFECTIVE MASS
SHANTHARAMA, LG
ADAMS, AR
AHMAD, CN
NICHOLAS, RJ
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (25): : 4429 - 4442
[23] THRESHOLD CURRENTS FOR ALGAAS QUANTUM WELL LASERS
SUGIMURA, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (04) : 336 - 343
[24] EFFECT OF AUGER RECOMBINATION ON LASER OPERATION IN GA1-XALXAS
TAKESHIMA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) : 3846 - 3850
[25] THOOFT GW, 1983, ACTA ELECTRON, V25, P193
[26] THOOFT GW, 1988, SUPERLATTICE MICROST, V1, P307
[27] GAAS-ALGAAS MQW AND GRINSCH LASERS GROWN BY MOLECULAR-BEAM EPITAXY
WEIMANN, G
SCHLAPP, W
[J]. PHYSICA B & C, 1985, 129 (1-3): : 459 - 464
[28] WOLFORD DJ, 1984, I PHYS C SER, V74, P275
[29] SHORT WAVELENGTH (VISIBLE) GAAS QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
WOODBRIDGE, K
BLOOD, P
FLETCHER, ED
HULYER, PJ
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 16 - 18
[30] SYSTEMATICS OF LASER OPERATION IN GAAS/ALGAAS MULTIQUANTUM WELL HETEROSTRUCTURES
ZIELINSKI, E
SCHWEIZER, H
HAUSSER, S
STUBER, R
PILKUHN, MH
WEIMANN, G
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 969 - 976