PHOTOREFLECTANCE AND PHOTOLUMINESCENCE STUDIES OF CD1-XMNXTE - BROADENING EFFECTS

被引：18

作者：

LAY, KY ^{[1
]}

NEFF, H ^{[1
]}

BACHMANN, KJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT CHEM,RALEIGH,NC 27695

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 92卷 / 02期

关键词：

D O I：

10.1002/pssa.2210920230

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

21

引用

收藏

页码：567 / 571

页数：5

相关论文

共 21 条

[1] SCREENING OF BOUND-STATE EXCITONS IN MODULATED REFLECTANCE
ALBERS, WA
[J]. PHYSICAL REVIEW LETTERS, 1969, 23 (08) : 410 - &
[2] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE
ASPNES, DE
[J]. SURFACE SCIENCE, 1973, 37 (01) : 418 - 442
[3] MELT AND SOLUTION GROWTH OF BULK SINGLE-CRYSTALS OF QUATERNARY-III-V ALLOYS
BACHMANN, KJ
THIEL, FA
SCHREIBER, H
[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (03): : 171 - 206
[4] ELECTROREFLECTANCE STUDIES IN CD1-XMNXTE SOLID-SOLUTIONS
BOTTKA, N
STANKIEWICZ, J
GIRIAT, W
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4189 - 4193
[5] GAY JG, 1968, PHYS REV, V172, P311
[6] ETCH PITS AND POLARITY IN CDTE CRYSTALS
INOUE, M
TAKAYANAGI, S
TERAMOTO, I
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) : 2578 - &
[7] POTENTIAL MATERIAL FOR NARROW-BAND DETECTORS IN THE VISIBLE RANGE
JOSHI, NV
MARTIN, J
QUINTERO, P
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 79 - 80
[8] LAY KY, 1985, J ELECTROCHEM SOC
[9] STUDY OF THE 2.0-EV PHOTO-LUMINESCENCE BAND IN CD1-XMNXTE SEMICONDUCTOR ALLOYS
MORIWAKI, MM
BECKER, WM
GEBHARDT, W
GALAZKA, RR
[J]. PHYSICAL REVIEW B, 1982, 26 (06): : 3165 - 3171
[10] REFLECTANCE MODULATION BY SURFACE FIELD IN GAAS
NAHORY, RE
SHAY, JL
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (23) : 1569 - &