PERFORMANCE OF CARBON MONOXIDE SENSITIVE MOSFETS WITH METAL-OXIDE SEMICONDUCTOR GATES

被引:21
作者
DOBOS, K [1 ]
ZIMMER, G [1 ]
机构
[1] FRAUNHOFER INST MICROELECTR CIRCUITS & SYST,D-4100 DUISBURG 1,FED REP GER
关键词
D O I
10.1109/T-ED.1985.22094
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1165 / 1169
页数:5
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