PERFORMANCE OF CARBON MONOXIDE SENSITIVE MOSFETS WITH METAL-OXIDE SEMICONDUCTOR GATES

被引：21

作者：

DOBOS, K ^{[1
]}

ZIMMER, G ^{[1
]}

机构：

[1] FRAUNHOFER INST MICROELECTR CIRCUITS & SYST,D-4100 DUISBURG 1,FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 07期

关键词：

D O I：

10.1109/T-ED.1985.22094

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1165 / 1169

页数：5

共 8 条

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[2] PERFORMANCE OF GAS-SENSITIVE PD-GATE MOSFETS WITH SIO2 AND SI3N4 GATE INSULATORS [J].

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[3]

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[4] HYDROGEN SENSITIVE MOS-STRUCTURES .1. PRINCIPLES AND APPLICATIONS [J].

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[5] HYDROGEN SENSITIVE MOS-STRUCTURES .2. CHARACTERIZATION [J].

LUNDSTROM, I ;

SODERBERG, D .

SENSORS AND ACTUATORS, 1981, 2 (02) :105-138

[6] HYDROGEN-SENSITIVE PD-GATE MOS-TRANSISTOR [J].

LUNDSTROM, KI ;

SHIVARAMAN, MS ;

SVENSSON, CM .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3876-3881

[7]

REIS A, 1983, MAY P SOL STAT TRANS

[8] DETECTION OF H2S WITH PD-GATE MOS FIELD-EFFECT TRANSISTORS [J].

SHIVARAMAN, MS .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3592-3593

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