IODIDE ION-SENSITIVE FIELD-EFFECT STRUCTURES

被引：6

作者：

SCHONING, MJ ^{[1
]}

BRUNS, M ^{[1
]}

HOFFMANN, W ^{[1
]}

HOFFMANN, B ^{[1
]}

ACHE, HJ ^{[1
]}

机构：

[1] UNIV KARLSRUHE,INST TECHNOL ELEKTROTECH,W-7500 KARLSRUHE 21,GERMANY

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1993年 / 15卷 / 1-3期

关键词：

D O I：

10.1016/0925-4005(93)85049-G

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A new ion-selective thin-film membrane for ion-sensitive field-effect structures has been realized. Silver iodide (AgI) as an iodide-sensitive material has been vacuum evaporated onto semiconductor-insulator substrates. Various preconditioning and vacuum evaporation parameters as well as post treatment conditions were tested. Sensitivity and selectivity of these model field-effect structures were investigated by capacitance-voltage (CV) measurements. Nernstian behaviour, good selectivity and a high lifetime comparable with that of the ion-selective electrode (ISE) could be obtained. This method of membrane fabrication is expected to be suitable for the large scale manufacture of sensor chips.

引用

页码：192 / 194

页数：3

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