DEPOSITION OF AMORPHOUS CO-TA AND CO-ZR THIN-FILMS BY MEANS OF DOUBLE ION-BEAM SPUTTERING

被引：14

作者：

NAOE, M ^{[1
]}

TERADA, N ^{[1
]}

HOSHI, Y ^{[1
]}

YAMANAKA, S ^{[1
]}

机构：

[1] TOKYO INST POLYTECH,FAC ENGN,ATSUGI,KANAGAWA 24302,JAPAN

来源：

关键词：

D O I：

10.1109/TMAG.1984.1063438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

COBALT TANTALUM ALLOYS

引用

页码：1311 / 1313

页数：3

共 6 条

[1] HATTORI M, 1982, JAPAN J MAG SOC, V6, P47
[2] CONCENTRATION-DEPENDENCE OF CO MOMENT IN AMORPHOUS ALLOYS OF CO WITH Y, LA, AND ZR
HEIMAN, N
KAZAMA, N
[J]. PHYSICAL REVIEW B, 1978, 17 (05): : 2215 - 2220
[3] PROPERTIES OF AMORPHOUS CO-TA AND CO-W FILMS DEPOSITED BY RF SPUTTERING
NAOE, M
KAZAMA, H
HOSHI, Y
YAMANAKA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7846 - 7848
[4] Naoe M., 1983, Proceedings of the International Ion Engineering Congress. The 7th Symposium (1983 International) on Ion Sources and Ion Assisted Technology (ISIAT '83) and the 4th International Conference on Ion and Plasma Assisted Techniques (IPAT '83), P1005
[5] NAOE M, 1983, IEEE T MAG, V19, P1958
[6] SHIMADA Y, 1982, 1982 P SEND S PERP M, P111