NATIVE DEFECT COMPENSATION IN HGI2 CRYSTALS

被引：39

作者：

WHITED, RC ^{[1
]}

VANDENBERG, L ^{[1
]}

机构：

[1] EG&G,SANTA BARBARA OPERAT,GOLETA,CA 93017

来源：

关键词：

D O I：

10.1109/TNS.1977.4328662

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：165 / 167

页数：3

共 14 条

[1] OPTO-ELECTRONIC PROPERTIES OF MERCURIC IODIDE
BUBE, RH
[J]. PHYSICAL REVIEW, 1957, 106 (04): : 703 - 717
[2] THE ELECTRON TRAP MECHANISM OF LUMINESCENCE IN SULPHIDE AND SILICATE PHOSPHORS
GARLICK, GFJ
GIBSON, AF
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1948, 60 (342): : 574 - 590
[3] GELBART U, 1976, OCT P NUCL SCI S NEW
[4] LUSCHIK CB, 1955, DOKL AKAD NAUK SSSR, V101, P641
[5] MARTIN GM, 1975, JUN WORKSH HGI2 U ST
[6] MILNES AG, 1973, DEEP IMPURITIES SEMI, P75
[7] RANDTKE PT, 1976, OCT P NUCL SCI S NEW
[8] RANDTKE PT, 1976, MAY P ERDA S X GAMM
[9] SAURA J, 1972, THESIS U DECUYO
[10] EVAPORATIVE DEGRADATION OF HGI2 X-RAY DETECTORS
SCOTT, RS
FREDERICKS, GE
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 99 - 100