EVOLUTION OF THE MOS-TRANSISTOR - FROM CONCEPTION TO VLSI

被引：80

作者：

SAH, CT

机构：

[1] Univ of Florida, Gainesville, FL,, USA

来源：

PROCEEDINGS OF THE IEEE | 1988年 / 76卷 / 10期

关键词：

Manuscript received August 1; 1986; revised July 14; 1988. The research was supported in part by two sequential grants from the U.S. National Science Foundation; three sequential and ongoing contracts with the Semiconductor Research Corporation concerning silicon MOS aging and failure mechanisms as well as reliability physics; chemistry; and modeling; and an unrestricted Intel grant for the author‘s stipend of the summer of 1988;

D O I：

10.1109/5.16328

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

260

引用

页码：1280 / 1326

页数：47

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