THE EFFECT OF INDIUM ON THE ELECTRONIC-PROPERTIES OF ARSENIC TRISELENIDE

被引：2

作者：

BARCLAY, RP

机构：

[1] Dept. of Mater. Eng., Univ. Coll. of Swansea

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1994年 / 6卷 / 37期

关键词：

D O I：

10.1088/0953-8984/6/37/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A preliminary investigation of the effects of doping arsenic triselenide with indium was carried out. Measurements of DC conductivity, photomobility and optical absorption were performed. We find a significant improvement in the main transport properties. The findings are explained in terms of a shift of the valence band edge towards the centre of the mobility gap as a function of doping rather than a shift of the Fermi level towards the band edge.

引用

页码：L549 / L552

页数：4

共 14 条

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