DISTRIBUTION OF GAP STATES IN A-AS2SE3

被引：43

作者：

ADRIAENSSENS, GJ

机构：

[1] Katholieke Universiteit Leuven, Laboratorium voor Vaste-Stof-en Hoge-Drukfysika, Leuven, B-3030

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1990年 / 62卷 / 01期

关键词：

D O I：

10.1080/13642819008205536

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A series of pure bulk a-As2Se3 samples has been examined by means of steady- state and transient photoconductivity techniques as well as by photoinduced absorption in order to clarify the requirements to be met by a model for the distribution of gap states in this material. Some sources of metastable defects, which probably distorted earlier measurements, are identified. The distribution required is found to be broad and featureless but must allow for a set of discrete excitation energies. A model by Klinger and Karpov involving elastically soft lattice configurations best satisfies these conditions. © 1990 Taylor & Francis Ltd.

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页码：79 / 87

页数：9

相关论文

共 25 条

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].

ANDERSON, PW .

PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955

[2]

BRUGGEMANN R, 1990, PHIL MAG B

[3] A NEW COMPARISON OF PHOTO-LUMINESCENCE IN CRYSTALLINE AND AMORPHOUS ARSENIC TRISELENIDE (AS2SE3) [J].

DEPINNA, SP ;

CAVENETT, BC ;

LAMB, WE .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (01) :99-106

[4] EFFECT OF ELECTRONEGATIVITY DIFFERENCE ON DEFECT CHEMISTRY IN LONE-PAIR SEMICONDUCTORS [J].

FRITZSCHE, H ;

GACZI, PJ ;

KASTNER, M .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (05) :593-600

[5] INFLUENCE OF OXYGEN ON THE ELECTRONIC GAP-STATE DENSITY OF A-AS2SE3 [J].

HAMMAM, M ;

ADRIAENSSENS, GJ ;

DAUWEN, J ;

SEYNHAEVE, G ;

GREVENDONK, W .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1990, 119 (01) :89-94

[6] STEADY-STATE PHOTOCONDUCTIVITY IN AMORPHOUS ARSENIC SELENIDE COMPOUNDS [J].

HAMMAM, M ;

ADRIAENSSENS, GJ ;

GREVENDONK, W .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (10) :2151-2160

[7]

KARPOV VG, 1983, ZH EKSP TEOR FIZ+, V58, P592

[8]

Klinger M. I., 1988, Physics Reports, V165, P275, DOI 10.1016/0370-1573(88)90158-5

[9] SELF-TRAPPED SINGLE-PARTICLE EXCITATIONS IN EQUILIBRIUM AND PHOTOCONDUCTIVITY IN GLASSY SEMICONDUCTORS [J].

KLINGER, MI ;

KUDRYAVTSEV, VG ;

RYAZANOV, MI ;

TARASKIN, SN .

PHYSICAL REVIEW B, 1989, 40 (09) :6311-6320

[10]

KLINGER MI, 1982, ZH EKSP TEOR FIZ, V55, P976