NUMERICAL-CALCULATIONS OF THE ELECTRICAL EFFECTS INDUCED BY STRUCTURAL IMPERFECTIONS ON MOS CAPACITORS

被引：3

作者：

LOPES, MCV ^{[1
]}

HASENACK, CM ^{[1
]}

BARANAUSKAS, V ^{[1
]}

机构：

[1] UNICAMP, FEE, DSIF, BR-13081 CAMPINAS, SP, BRAZIL

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 06期

关键词：

D O I：

10.1149/1.2054972

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

As the thickness of gate quality SiO2 is reduced, minor structural interface imperfections begin to play an important role in device performance and yield. To isolate the effects of a variety of such interface imperfections on electric field distribution within the SiO2 layer of biased metal oxide semiconductor capacitors, numerical calculations were carried out. The results indicate that strong electric field distortions may be expected for almost any interfacial defect configuration, being highest for metal precipitates. Technological consequences of the findings are also discussed.

引用

页码：1621 / 1628

页数：8

共 20 条

[1]

Abe H., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P372

[2]

ABE H, 1986, ELECTROCHEMICAL SOC, P1011

[3] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].