A NOVEL X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE AL/SIO2 INTERFACE

被引：36

作者：

HECHT, MH

VASQUEZ, RP

GRUNTHANER, FJ

ZAMANI, N

MASERJIAN, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.335266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5256 / 5262

页数：7

共 29 条

[1] THE EFFECT OF ION INDUCED ROUGHNESS ON THE DEPTH RESOLUTION OF AUGER SPUTTER PROFILING OF MNOS DEVICES [J].

ADACHI, T ;

HELMS, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (01) :119-119

[2] ELECTRON INELASTIC MEAN FREE PATHS IN SEVERAL SOLIDS FOR 200 EV LESS-THAN-OR-EQUAL-TO E LESS-THAN-OR-EQUAL-TO 10 KEV [J].

ASHLEY, JC ;

TUNG, CJ .

SURFACE AND INTERFACE ANALYSIS, 1982, 4 (02) :52-55

[3] SURFACE RESONANCES AND OXIDATION OF SINGLE-CRYSTAL ALUMINUM [J].

BACHRACH, RZ ;

FLODSTROM, SA ;

BAUER, RS ;

HASTROM, SBM ;

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :488-493

[4] SURFACE-REACTIONS AND INTERDIFFUSION [J].

BACHRACH, RZ ;

BAUER, RS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1149-1153

[5] AU AND AL INTERFACE REACTIONS WITH SIO2 [J].

BAUER, RS ;

BACHRACH, RZ ;

BRILLSON, LJ .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1006-1008

[6]

Blackburn WH, 1977, CAN MINERAL, V15, P257

[7] SOLID-PHASE REDUCTION OF SIO2 IN THE PRESENCE OF AN AL LAYER [J].

BLATTNER, RJ ;

BRAUNDMEIER, AJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :320-323

[8]

CANDELA GA, 1982, THIN SOLID FILMS, V82, P183

[9] AL REACTION WITH SIO2 - AN AUGER-ELECTRON SPECTROSCOPY AND ENERGY-LOSS SPECTROSCOPY STUDY [J].

DERRIEN, J ;

COMMANDRE, M ;

LAYET, JM ;

SALVAN, F ;

CROS, A .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (04) :247-250

[10] SIO2 ULTRA THIN-FILM GROWTH-KINETICS AS INVESTIGATED BY SURFACE TECHNIQUES [J].

DERRIEN, J ;

COMMANDRE, M .

SURFACE SCIENCE, 1982, 118 (1-2) :32-46

← 1 2 3 →