A NOVEL X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE AL/SIO2 INTERFACE

被引：36

作者：

HECHT, MH

VASQUEZ, RP

GRUNTHANER, FJ

ZAMANI, N

MASERJIAN, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.335266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5256 / 5262

页数：7

共 29 条

[21] TUNNELING IN THIN MOS STRUCTURES [J].

MASERJIAN, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :996-1003

[22] BEHAVIOR OF THE SI/SIO2 INTERFACE OBSERVED BY FOWLER-NORDHEIM TUNNELING [J].

MASERJIAN, J ;

ZAMANI, N .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :559-567

[23]

MASSOUD H, 1983, G5021 STANF EL LAB T

[24] PHYSICAL STRUCTURE OF AL-PSI METAL-INSULATOR SEMICONDUCTOR SOLAR-CELLS [J].

OLSEN, LC ;

BARTON, DL ;

MILLER, W ;

GARNIER, JE ;

TURCOTTE, RP .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6393-6398

[25] METAL MONOLAYERS [J].

RHEAD, GE .

CONTEMPORARY PHYSICS, 1983, 24 (06) :535-559

[26] EVIDENCE FOR REACTION AT THE A1-SIO2 INTERFACE [J].

ROBERTS, S ;

DOBSON, PJ .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (03) :L17-L22

[27] CHEMICAL-STRUCTURE OF AL-SIO2 INTERFACE [J].

STRAUSSER, YE ;

MAJUMDER, KS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :238-239

[28] OBSERVATIONS OF AL2O3 AND FREE SILICON AT INTERFACE BETWEEN ALUMINUM FILMS AND SIO2 [J].

STRAUSSER, YE ;

SCHEIBNER, EJ ;

JOHANNESSEN, JS .

THIN SOLID FILMS, 1978, 52 (02) :203-214

[29] ETCHING OF SILICON WITH XEF2 VAPOR [J].

WINTERS, HF ;

COBURN, JW .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :70-73

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