CHEMICAL-STRUCTURE OF AL-SIO2 INTERFACE

[1] THERMAL EFFECTS ON INTEGEGRITY OF ALUMINUM TO SILICON CONTACTS IN SILICON INTEGRATED CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 381 - &

[2] BOWER RW, 1973, APPL PHYS LETT, V23, P99, DOI 10.1063/1.1654823

[3] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[4] LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM [J]. APPLIED PHYSICS LETTERS, 1971, 18 (05) : 178 - &

[5] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3643 - &

[6] KINETICS OF COMPOUND FORMATION IN THIN-FILM COUPLES OF AL AND TRANSITION-METALS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 68 - 71

[7] MICROPROBE AUGER ANALYSIS OF SI MIGRATION IN AL METALLIZATION FOR LSI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 63 - 69

[8] AUGER ANALYSIS OF SIO2-SI INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3028 - 3037

[9] AUGER DEPTH PROFILING OF INTERFACES IN MOS AND MNOS STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 849 - 855

[10] EVALUATION OF GLANCING ANGLE X-RAY-DIFFRACTION AND MEV HE-4 BACKSCATTERING ANALYSES OF SILICIDE FORMATION [J]. THIN SOLID FILMS, 1974, 23 (02) : 205 - 213

[1] THERMAL EFFECTS ON INTEGEGRITY OF ALUMINUM TO SILICON CONTACTS IN SILICON INTEGRATED CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 381 - &

[2] BOWER RW, 1973, APPL PHYS LETT, V23, P99, DOI 10.1063/1.1654823

[3] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[4] LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM [J]. APPLIED PHYSICS LETTERS, 1971, 18 (05) : 178 - &

[5] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3643 - &

[6] KINETICS OF COMPOUND FORMATION IN THIN-FILM COUPLES OF AL AND TRANSITION-METALS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 68 - 71

[7] MICROPROBE AUGER ANALYSIS OF SI MIGRATION IN AL METALLIZATION FOR LSI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 63 - 69

[8] AUGER ANALYSIS OF SIO2-SI INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3028 - 3037

[9] AUGER DEPTH PROFILING OF INTERFACES IN MOS AND MNOS STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 849 - 855

[10] EVALUATION OF GLANCING ANGLE X-RAY-DIFFRACTION AND MEV HE-4 BACKSCATTERING ANALYSES OF SILICIDE FORMATION [J]. THIN SOLID FILMS, 1974, 23 (02) : 205 - 213