MICROPROBE AUGER ANALYSIS OF SI MIGRATION IN AL METALLIZATION FOR LSI

[1] ANSTEAD RJ, 1969, IEEE T ELECTRON DEVI, V16, P380

[2] BELLIER SP, 1973, EXT ABSTR ECS SPR M, P316

[3] ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1587 - &

[4] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J]. SURFACE SCIENCE, 1975, 48 (01) : 9 - 21

[5] CHANG CC, 1974, CHARACTERIZATION SOL, P509

[6] ELECTRO-THERMOMIGRATION IN AL-SI, AU-SI INTERDIGITIZED TEST STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 2975 - 2979

[7] ELECTROMIGRATION AND FAILURE IN ELECTRONICS - INTRODUCTION [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10): : 1409 - &

[8] INOUE T, 1975, JAPAN J APPL PHYS S, V44, P329

[9] INOUE T, 1974, JAPAN J APPL PHYS S, V13, P819

[10] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &

[1] ANSTEAD RJ, 1969, IEEE T ELECTRON DEVI, V16, P380

[2] BELLIER SP, 1973, EXT ABSTR ECS SPR M, P316

[3] ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1587 - &

[4] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J]. SURFACE SCIENCE, 1975, 48 (01) : 9 - 21

[5] CHANG CC, 1974, CHARACTERIZATION SOL, P509

[6] ELECTRO-THERMOMIGRATION IN AL-SI, AU-SI INTERDIGITIZED TEST STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 2975 - 2979

[7] ELECTROMIGRATION AND FAILURE IN ELECTRONICS - INTRODUCTION [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10): : 1409 - &

[8] INOUE T, 1975, JAPAN J APPL PHYS S, V44, P329

[9] INOUE T, 1974, JAPAN J APPL PHYS S, V13, P819

[10] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &