EVIDENCE FOR REACTION AT THE A1-SIO2 INTERFACE

[1] SURFACE-REACTIONS AND INTERDIFFUSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153

[2] SIMPLE ROTATING JET-THINNING APPARATUS FOR PRODUCING TAPER SECTIONS AND ELECTRON-MICROSCOPE SPECIMENS FROM SILICON AND COMPOUND SEMICONDUCTORS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (17) : 1991 - &

[3] DIPOLE LAYERS AT THE METAL-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4269 - 4281

[4] LIPPENS BC, 1964, J ELECTROCHEM SOC, V121, P430

[5] REACTION BETWEEN SILICA AND ALUMINUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : 430 - 434

[6] VOID FORMATION AND GROWTH DURING ELECTROMIGRATION IN THIN FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5671 - &

[7] RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (05) : 201 - +

[8] OBSERVATIONS OF AL2O3 AND FREE SILICON AT INTERFACE BETWEEN ALUMINUM FILMS AND SIO2 [J]. THIN SOLID FILMS, 1978, 52 (02) : 203 - 214

[9] LARGE AREA SUBSTRATE HEATER FOR ULTRA HIGH-VACUUM [J]. VACUUM, 1973, 23 (09) : 327 - 329

[10] LINEWIDTH DEPENDENCE OF ELECTROMIGRATION IN EVAPORATED AL-0.5-PERCENT CU [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 464 - 466

[1] SURFACE-REACTIONS AND INTERDIFFUSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153

[2] SIMPLE ROTATING JET-THINNING APPARATUS FOR PRODUCING TAPER SECTIONS AND ELECTRON-MICROSCOPE SPECIMENS FROM SILICON AND COMPOUND SEMICONDUCTORS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (17) : 1991 - &

[3] DIPOLE LAYERS AT THE METAL-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4269 - 4281

[4] LIPPENS BC, 1964, J ELECTROCHEM SOC, V121, P430

[5] REACTION BETWEEN SILICA AND ALUMINUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : 430 - 434

[6] VOID FORMATION AND GROWTH DURING ELECTROMIGRATION IN THIN FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5671 - &

[7] RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (05) : 201 - +

[8] OBSERVATIONS OF AL2O3 AND FREE SILICON AT INTERFACE BETWEEN ALUMINUM FILMS AND SIO2 [J]. THIN SOLID FILMS, 1978, 52 (02) : 203 - 214

[9] LARGE AREA SUBSTRATE HEATER FOR ULTRA HIGH-VACUUM [J]. VACUUM, 1973, 23 (09) : 327 - 329

[10] LINEWIDTH DEPENDENCE OF ELECTROMIGRATION IN EVAPORATED AL-0.5-PERCENT CU [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 464 - 466