LANGEVIN RECOMBINATION OF DRIFTING ELECTRONS AND HOLES IN STABILIZED A-SE (CL-DOPED A-SE-0.3-PERCENT-AS)

被引：26

作者：

HAUGEN, C

KASAP, SO

机构：

[1] Department of Electrical Engineering, University of Saskatchewan, Saskatoon

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1995年 / 71卷 / 01期

关键词：

D O I：

10.1080/01418639508240295

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The double flash technique of F. K. Dolezalek and W. E. Spear (1975, J. Phys. Chem. Solids, 36, 819) for the measurement of recombination coefficients was used to determine the recombination mechanism of drifting electrons and holes in stabilized a-Se (Cl-doped a-Se:0.3% As). The experiments show that the recombination process follows the Langevin mechanism.

引用

页码：91 / 96

页数：6

共 7 条

[1] X-RAY-SENSITIVITY OF HALOGENATED A-SE-AS PHOTORECEPTORS FOR ELECTRORADIOGRAPHY [J].