OPTICAL PHENOMENA IN GE-GAP HETEROJUNCTIONS

[1] Allen F.G., 1961, B AM PHYS SOC 2, V6, P421

[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[3] GALLIUM PHOSPHIDE-GOLD SURFACE BARRIER [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) : 255 - &

[4] PROPOSAL FOR REDUCTION OF DIFFRACTION LOSSES IN P-N LASERS [J]. PHYSICA, 1963, 29 (06): : 600 - &

[5] FIELD-EFFECT INTERFACE CONDUCTANCE IN GE-GAAS N-N HETEROJUNCTIONS ( GE-GAAS HETEROJUNCTION INTERFACE CONDUCTANCE EFFECT OF ELECTRIC FIELD ON AC + DC TECHNIQUES E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (01) : 3 - &

[6] MEAD CA, 1964, PHYS REV A, V134, P713

[7] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165

[8] SCHEER JJ, PRIVATE COMMUNICATIO

[9] BARRIER HEIGHT STUDIES ON METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) : 3061 - +

[10] Tauc J., 1962, FOTO THERMOELECTRIC, P248

[1] Allen F.G., 1961, B AM PHYS SOC 2, V6, P421

[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[3] GALLIUM PHOSPHIDE-GOLD SURFACE BARRIER [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) : 255 - &

[4] PROPOSAL FOR REDUCTION OF DIFFRACTION LOSSES IN P-N LASERS [J]. PHYSICA, 1963, 29 (06): : 600 - &

[5] FIELD-EFFECT INTERFACE CONDUCTANCE IN GE-GAAS N-N HETEROJUNCTIONS ( GE-GAAS HETEROJUNCTION INTERFACE CONDUCTANCE EFFECT OF ELECTRIC FIELD ON AC + DC TECHNIQUES E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (01) : 3 - &

[6] MEAD CA, 1964, PHYS REV A, V134, P713

[7] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165

[8] SCHEER JJ, PRIVATE COMMUNICATIO

[9] BARRIER HEIGHT STUDIES ON METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) : 3061 - +

[10] Tauc J., 1962, FOTO THERMOELECTRIC, P248