THEORY OF SCHOTTKY-BARRIER AND METALLIZATION

被引：25

作者：

BATRA, IP ^{[1
]}

TEKMAN, E ^{[1
]}

CIRACI, S ^{[1
]}

机构：

[1] BILKENT UNIV,DEPT PHYS,BILKENT 06533,TURKEY

来源：

PROGRESS IN SURFACE SCIENCE | 1991年 / 36卷 / 04期

关键词：

D O I：

10.1016/0079-6816(91)90014-U

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The formation of the rectifying Schottky barrier on metal-semiconductor interfaces is one of the longest standing problems of solid-state physics. We present a review of the models and theories for Schottky barrier. Two important examples of metal-semiconductor interfaces, namely those containing simple and alkali metals, are analyzed in order to evaluate these models and theories in the light of ab-initio calculations.

引用

页码：289 / 361

页数：73

共 144 条

[1]

ABRAHAM FF, 1985, SURF SCI, V163, pL752, DOI 10.1016/0039-6028(85)91055-6

[2] PHOTOELECTRON DIFFRACTION STUDY OF SI(001)2X1-K SURFACE - EXISTENCE OF A POTASSIUM DOUBLE-LAYER [J].