STRUCTURAL-CHANGES PRODUCED IN SILICON BY INTENSE 1-MU-M PS PULSES

被引：19

作者：

SMIRL, AL

BOYD, IW

BOGGESS, TF

MOSS, SC

VANDRIEL, HM

机构：

[1] N TEXAS STATE UNIV,CTR APPL QUANTUM ELECTR,DENTON,TX 76203

[2] UNIV TORONTO,DEPT PHYS,TORONTO M5S 1A1,ONTARIO,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 03期

关键词：

D O I：

10.1063/1.337362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1169 / 1182

页数：14

相关论文

共 44 条

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[7] TEMPORALLY RESOLVED IMAGING OF SILICON SURFACES MELTED WITH INTENSE PICOSECOND 1-MU-M LASER-PULSES
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[10] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS
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