THE DEPENDENCE OF LIGHT-INTENSITY ON SURFACE-MORPHOLOGY AND IMPURITY INCORPORATION FOR ZNSE GROWN BY PHOTO-ASSISTED MOVPE

被引：39

作者：

YASUDA, T

KOYAMA, Y

WAKITANI, J

YOSHINO, J

KUKIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 09期

关键词：

D O I：

10.1143/JJAP.28.L1628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1628 / L1630

页数：3

共 6 条

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[2] GAS-PHASE AND SURFACE-REACTIONS IN XENON LAMP-ASSISTED ORGANOMETALLIC VAPOR-PHASE EPITAXY OF ZNSE
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2019 - L2021
[3] INVESTIGATIONS OF PHOTO-ASSOCIATION MECHANISM FOR GROWTH-RATE ENHANCEMENT IN PHOTO-ASSISTED OMVPE OF ZNSE AND ZNS
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ISEMURA, M
FUJITA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 259 - 264
[4] GROWTH-RATE ENHANCEMENT BY XENON LAMP IRRADIATION IN ORGANOMETALLIC VAPOR-PHASE EPITAXY OF ZNSE
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TANABE, A
SAKAMOTO, T
ISEMURA, M
FUJITA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12): : L2000 - L2002
[5] HOSHIKAWA A, 1984, JPN J APPL PHYS, V23, pL773
[6] SELECTIVE AREA CONTROL OF MATERIAL PROPERTIES IN LASER-ASSISTED MOVPE OF GAAS AND ALGAAS
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