SELECTIVE AREA CONTROL OF MATERIAL PROPERTIES IN LASER-ASSISTED MOVPE OF GAAS AND ALGAAS

被引：29

作者：

KUKIMOTO, H

BAN, Y

KOMATSU, H

TAKECHI, M

ISHIZAKI, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90305-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：223 / 228

页数：6

相关论文

共 6 条

[1] LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS
AOYAGI, Y
MASUDA, S
NAMBA, S
DOI, A
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 95 - 96
[2] IMPROVEMENT IN ELECTRICAL-PROPERTIES OF LASER ANNEALED ION-IMPLANTED GAAS
BADAWI, MH
SEALY, BJ
STEPHENS, KG
AKINTUNDE, JA
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 139 - 143
[3] EXCIMER LASER-INDUCED DEPOSITION OF INP - CRYSTALLOGRAPHIC AND MECHANISTIC STUDIES
DONNELLY, VM
BRASEN, D
APPELBAUM, A
GEVA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 2022 - 2035
[4] PHOTOEXCITATION EFFECTS ON THE GROWTH-RATE IN THE VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS
NISHIZAWA, J
KOKUBUN, Y
SHIMAWAKI, H
KOIKE, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1939 - 1942
[5] MOLECULAR LAYER EPITAXY
NISHIZAWA, J
ABE, H
KURABAYASHI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1197 - 1200
[6] PHOTOSTIMULATED GROWTH OF GAAS IN THE MOCVD SYSTEM
PUTZ, N
HEINECKE, H
VEUHOFF, E
ARENS, G
HEYEN, M
LUTH, H
BALK, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 194 - 199