TEMPERATURE-DEPENDENCE OF THE SI AND GE (111)2X1 SURFACE-STATE OPTICAL-ABSORPTION

被引:18
作者
OLMSTEAD, MA [1 ]
AMER, NM [1 ]
机构
[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,APPL PHYS & LASER SPECTROSCOPY GRP,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 04期
关键词
D O I
10.1103/PhysRevB.33.2564
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2564 / 2573
页数:10
相关论文
共 52 条
[1]   OPTICAL-PROPERTIES OF DANGLING-BOND STATES AT CLEAVED SILICON SURFACES [J].
ASSMANN, J ;
MONCH, W .
SURFACE SCIENCE, 1980, 99 (01) :34-44
[2]  
Auer P.P, 1974, JAPAN J APPL PHYS 2, V2, P397
[3]   CLEAVED SI(111) SURFACES - GEOMETRICAL AND ANNEALING BEHAVIOR [J].
AUER, PP ;
MONCH, W .
SURFACE SCIENCE, 1979, 80 (01) :45-55
[4]   OPTICAL PROPERTIES OF SEMICONDUCTORS .3. INFRA-RED TRANSMISSION OF SILICON [J].
BECKER, M ;
FAN, HY .
PHYSICAL REVIEW, 1949, 76 (10) :1531-1532
[5]   TUNNELING IMAGES OF GERMANIUM SURFACE RECONSTRUCTIONS AND PHASE BOUNDARIES [J].
BECKER, RS ;
GOLOVCHENKO, JA ;
SWARTZENTRUBER, BS .
PHYSICAL REVIEW LETTERS, 1985, 54 (25) :2678-2680
[6]   SURFACE PHOTOVOLTAGE SPECTROSCOPY OF ELECTRONIC SURFACE STATES ON CLEAVED GERMANIUM (111) SURFACES [J].
BUCHEL, M ;
LUTH, H .
SURFACE SCIENCE, 1975, 50 (02) :451-464
[7]  
Chabal Y.J., 1983, Bull. Am. Phys. Soc, V28, P860
[8]   PI-BONDED MOLECULAR AND CHAIN MODELS FOR THE SI(111) SURFACE [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1982, 26 (08) :4762-4765
[9]   ELECTRON-PHONON COUPLING AND SURFACE-STATE POLARONS ON SI(111)2X1 [J].
CHEN, CD ;
SELLONI, A ;
TOSATTI, E .
PHYSICAL REVIEW B, 1984, 30 (12) :7067-7091
[10]   DIFFERENTIAL REFLECTIVITY OF SI(111)2X1 SURFACE WITH POLARIZED-LIGHT - A TEST FOR SURFACE-STRUCTURE [J].
CHIARADIA, P ;
CRICENTI, A ;
SELCI, S ;
CHIAROTTI, G .
PHYSICAL REVIEW LETTERS, 1984, 52 (13) :1145-1147