SURFACE RESONANT-TUNNELING TRANSISTOR - A NEW NEGATIVE TRANSCONDUCTANCE DEVICE

被引：15

作者：

KURDAK, C

TSUI, DC

PARIHAR, S

SANTOS, MB

MANOHARAN, HC

LYON, SA

SHAYEGAN, M

机构：

[1] Department of Electrical Engineering, Princeton University, Princeton

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.111065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new three-terminal device, the surface resonant tunneling transistor, is realized by the molecular beam epitaxial cleaved edge overgrowth technique in the GaAs/AlGaAs system. The device exhibits negative transconductance as well as negative differential resistance. Some possibilities for future applications of the device to low-power logic circuits are discussed.

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页码：610 / 612

页数：3

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