RESONANT TUNNELING OF 2-DIMENSIONAL ELECTRONS INTO ONE-DIMENSIONAL SUBBANDS OF A QUANTUM WIRE

被引:20
作者
ZASLAVSKY, A
TSUI, DC
SANTOS, M
SHAYEGAN, M
机构
[1] Department of Electrical Engineering, Princeton University, Princeton
关键词
D O I
10.1063/1.105192
中图分类号
O59 [应用物理学];
学科分类号
摘要
Liquid phase epitaxy regrowth on the edge of in situ cleaved substrates is employed to create a vertical two-dimensional electron gas in a double-barrier tunneling potential. Resonant tunneling of two-dimensional electrons through one-dimensional quantum wire subbands is unambiguously identified by negative differential resistance features in the transport characteristics. The bias positions of these features agree with simple tunneling theory estimates based on conservation laws and the calculated band alignment in the structure under bias.
引用
收藏
页码:1440 / 1442
页数:3
相关论文
共 17 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]   OSCILLATIONS UP TO 420 GHZ IN GAAS/ALAS RESONANT TUNNELING DIODES [J].
BROWN, ER ;
SOLLNER, TCLG ;
PARKER, CD ;
GOODHUE, WD ;
CHEN, CL .
APPLIED PHYSICS LETTERS, 1989, 55 (17) :1777-1779
[3]   RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].
CHANG, LL ;
ESAKI, L ;
TSU, R .
APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595
[4]   METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].
DELAGEBEAUDEUF, D ;
LINH, NT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960
[5]   TWO-DIMENSIONAL ELECTRON-GAS ON ETCHED GAAS SIDEWALLS BY LIQUID-PHASE EPITAXIAL REGROWTH [J].
FREI, MR ;
TSUI, DC .
APPLIED PHYSICS LETTERS, 1989, 55 (23) :2432-2434
[6]   RESONANT TUNNELING IN MAGNETIC-FIELDS - EVIDENCE FOR SPACE-CHARGE BUILDUP [J].
GOLDMAN, VJ ;
TSUI, DC ;
CUNNINGHAM, JE .
PHYSICAL REVIEW B, 1987, 35 (17) :9387-9390
[7]   EVIDENCE FOR LO-PHONON-EMISSION-ASSISTED TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES [J].
GOLDMAN, VJ ;
TSUI, DC ;
CUNNINGHAM, JE .
PHYSICAL REVIEW B, 1987, 36 (14) :7635-7637
[8]   OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES [J].
GOLDMAN, VJ ;
TSUI, DC ;
CUNNINGHAM, JE .
PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1256-1259
[9]   MAGNETIC-FIELD STUDIES OF ELASTIC-SCATTERING AND OPTIC-PHONON EMISSION IN RESONANT-TUNNELING DEVICES [J].
LEADBEATER, ML ;
ALVES, ES ;
EAVES, L ;
HENINI, M ;
HUGHES, OH ;
CELESTE, A ;
PORTAL, JC ;
HILL, G ;
PATE, MA .
PHYSICAL REVIEW B, 1989, 39 (05) :3438-3441
[10]   RESONANT TUNNELING OF TWO-DIMENSIONAL ELECTRONS THROUGH A QUANTUM WIRE - A NEGATIVE TRANSCONDUCTANCE DEVICE [J].
LURYI, S ;
CAPASSO, F .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1347-1349