EVIDENCE FOR KINETIC CONTROL OF ANODIC DARK AND PHOTODISSOLUTION OF N-III-V-SEMICONDUCTORS WITH ELECTRONS AND HOLES

被引：17

作者：

LORENZ, W

WOLF, B

机构：

来源：

ELECTROCHIMICA ACTA | 1983年 / 28卷 / 02期

关键词：

D O I：

10.1016/0013-4686(83)85108-1

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：191 / 194

页数：4

共 11 条

[1] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].

GARTNER, WW .

PHYSICAL REVIEW, 1959, 116 (01) :84-87

[2]

HANDSCHUH M, J ELECTROANAL CHEM

[3]

HANDSCHUH M, Z PHYS CHEM

[4] INTERPRETATION OF SELECTIVE ETCHING OF III-V COMPOUNDS ON THE BASIS OF SEMICONDUCTOR ELECTROCHEMISTRY [J].

HOLLAN, L ;

TRANCHART, JC ;

MEMMING, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) :855-859

[5] PHOTOCURRENT CONVERSION EFFICIENCY IN A SCHOTTKY-BARRIER [J].

JARRETT, HS .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4681-4689

[6] DIFFERENTIAL CAPACITANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODE [J].

LAFLERE, WH ;

CARDON, F ;

GOMES, WP .

SURFACE SCIENCE, 1974, 44 (02) :541-552

[7] DYNAMICAL THEORY OF PHOTOCURRENT VOLTAGE CURVES AND PHOTOCURRENT EFFICIENCY ON SEMICONDUCTOR ELECTRODES [J].

LORENZ, W ;

HANDSCHUH, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (01) :127-134

[8] MACROSCOPIC THEORY OF CHEMISORPTION AND PARTIAL CHARGE-TRANSFER PROCESSES ON SEMICONDUCTOR ELECTRODES [J].

LORENZ, W ;

HANDSCHUH, M .

ELECTROCHIMICA ACTA, 1980, 25 (03) :293-298

[9]

LORENZ W, 1982, Z PHYS CHEM, V263

[10] PHOTOCHARACTERISTICS FOR ELECTROLYTE-SEMICONDUCTOR JUNCTIONS [J].

REISS, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :937-949

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