FABRICATION OF 3-TERMINAL TRANSFERRED-ELECTRON LOGIC DEVICES BY PROTON-BOMBARDMENT FOR DEVICE ISOLATION

被引:8
作者
UPADHYAYULA, LC [1 ]
NARAYAN, SY [1 ]
DOUGLAS, EC [1 ]
机构
[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
关键词
D O I
10.1049/el:19750153
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:201 / 202
页数:2
相关论文
共 8 条
[1]  
CAULTON M, COMMUNICATION
[2]   ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J].
FOYT, AG ;
LINDLEY, WT ;
WOLFE, CM ;
DONNELLY, JP .
SOLID-STATE ELECTRONICS, 1969, 12 (04) :209-&
[3]  
GOLDSMITH N, 1967, RCA REV, V28, P153
[4]  
HARTNAGEL HL, 1972, ACTA ELECTRON, V15, P217
[5]  
KATAOKA S, 1972, 4TH P BIENN CORN EL, V4, P225
[6]   CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .1. DEPOSITION TECHNIQUES [J].
KERN, W ;
HEIM, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) :562-&
[7]  
MAUSE K, 1972, 4TH P BIENN CORN EL, V4, P211
[8]   CHARACTERISTICS AND APPLICATIONS OF A SCHOTTKY-BARRIER-GATE GUNN-EFFECT DIGITAL DEVICE [J].
SUGETA, T ;
TANIMOTO, M ;
IKOMA, T ;
YANAI, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (08) :504-515