INVESTIGATIONS OF THE INITIAL-STAGE OF THE EPITAXIAL-GROWTH OF CDTE LAYERS

被引:13
作者
SITTER, H [1 ]
SCHIKORA, D [1 ]
机构
[1] HUMBOLDT UNIV, SEKT PHYS, DDR-1040 BERLIN, GER DEM REP
关键词
D O I
10.1016/0040-6090(84)90414-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:137 / 142
页数:6
相关论文
共 6 条
  • [1] PARTIAL PRESSURES + GIBBS FREE ENERGY OF FORMATION FOR CONGRUENTLY SUBLIMING CDTE(C)
    BREBRICK, RF
    STRAUSS, AJ
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) : 1441 - &
  • [2] DAWERITZ L, 1972, THESIS HUMBOLDT U BE
  • [3] HIGH-QUALITY POLYSILICON BY AMORPHOUS LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
    HARBEKE, G
    KRAUSBAUER, L
    STEIGMEIER, EF
    WIDMER, AE
    KAPPERT, HF
    NEUGEBAUER, G
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 249 - 251
  • [4] HARBEKE G, UNPUB J ELECTROCHEM
  • [5] HARBEKE G, 1983, COMMUNICATION
  • [6] HOT WALL EPITAXY
    LOPEZOTERO, A
    [J]. THIN SOLID FILMS, 1978, 49 (01) : 3 - 57