FREE-ELECTRON DENSITY AND TRANSIT-TIME IN A FINITE SUPERLATTICE

被引:14
作者
JOGAI, B [1 ]
WANG, KL [1 ]
BROWN, KW [1 ]
机构
[1] AEROSPACE CORP,CHEM & PHYS LAB,SENSOR PHYS SECT,EL SEGUNDO,CA 90245
关键词
D O I
10.1063/1.336935
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:2968 / 2970
页数:3
相关论文
共 7 条
[1]   RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].
CHANG, LL ;
ESAKI, L ;
TSU, R .
APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595
[2]  
GERALD CF, 1980, APPLIED NUMERICAL AN
[3]   PHYSICS OF RESONANT TUNNELING - THE ONE-DIMENSIONAL DOUBLE-BARRIER CASE [J].
RICCO, B ;
AZBEL, MY .
PHYSICAL REVIEW B, 1984, 29 (04) :1970-1981
[4]   RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE [J].
SHEWCHUK, TJ ;
CHAPIN, PC ;
COLEMAN, PD ;
KOPP, W ;
FISCHER, R ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1985, 46 (05) :508-510
[5]   RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].
SOLLNER, TCLG ;
GOODHUE, WD ;
TANNENWALD, PE ;
PARKER, CD ;
PECK, DD .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590
[6]   TUNNELING IN A FINITE SUPERLATTICE [J].
TSU, R ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1973, 22 (11) :562-564
[7]   MULTIBARRIER TUNNELING IN GA1-XALXAS/GAAS HETEROSTRUCTURES [J].
VASSELL, MO ;
LEE, J ;
LOCKWOOD, HF .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5206-5213