(INAS)1/(GAAS)4 SUPERLATTICE STRAINED QUANTUM-WELL LASER AT 980 NM

The first successful MBE growth of (InAs)1/(GaAS)4 short-period superlattice (SPS) strained quantum well lasers emitting at approximately 980 nm is reported. The SPS consists of six periods of one and four monolayers of InAs and GaAs, respectively. The measured threshold current density was approximately 100 A cm-2 for 0.96 mm long lasers. Devices have operated up to 170-degrees-C with a characteristic temperature T0 of 148 K. The (InAs)m/(GaAs)n superlattice is an ordered counterpart of the InGaAs random alloy, and provides an alternative method of fabricating high speed electronic and photonic devices.