OPTICAL INVESTIGATION OF THE BAND-STRUCTURE OF INAS/GAAS SHORT-PERIOD SUPERLATTICES

被引：14

作者：

GERARD, JM

MARZIN, JY

DANTERROCHES, C

SOUCAIL, B

VOISIN, P

机构：

[1] CTR NATL ETUD TELECOMMUN,CNS,F-38243 MEYLAN,FRANCE

[2] ECOLE NORM SUPER,DEPT PHYS,F-75231 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 06期

关键词：

D O I：

10.1063/1.101832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：559 / 561

页数：3

共 8 条

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[3] HIGH-QUALITY ULTRATHIN INAS/GAAS QUANTUM WELLS GROWN BY STANDARD AND LOW-TEMPERATURE MODULATED-FLUXES MOLECULAR-BEAM EPITAXY [J].

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[5] MOLECULAR-BEAM EPITAXY GROWTH OF GAAS/INAS STRUCTURES ON (001) INP BY ALTERNATING III/V FLUXES [J].

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[6] ATOMIC LAYER EPITAXY OF THE GA-AS-IN-AS SUPERALLOY [J].

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BEDAIR, SM .

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[7]

RAZEGHI M, 1987, APPL PHYS LETT, V51, P2218

[8] LUMINESCENCE INVESTIGATIONS OF HIGHLY STRAINED-LAYER INAS-GAAS SUPERLATTICES [J].

VOISIN, P ;

VOOS, M ;

MARZIN, JY ;

TAMARGO, MC ;

NAHORY, RE ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 48 (21) :1476-1478

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