LUMINESCENCE INVESTIGATIONS OF HIGHLY STRAINED-LAYER INAS-GAAS SUPERLATTICES

被引：25

作者：

VOISIN, P

VOOS, M

MARZIN, JY

TAMARGO, MC

NAHORY, RE

CHO, AY

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

[2] BELL COMMUN RES,HOLMDEL,NJ 07733

[3] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 21期

关键词：

D O I：

10.1063/1.96894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1476 / 1478

页数：3

共 12 条

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[3]

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[4]

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[6]

MATSUI Y, 1986, UNPUB SURFACE SCI

[7]

MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[8] DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) :273-280

[9] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J].

MATTHEWS, JW ;

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[10]

OHNO H, 1986, UNPUB SURFACE SCI

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