SELECTIVE OPTICAL COMPENSATION EFFECT OF 2 NEW NEAR-BAND-EDGE EMISSIONS IN SIMULTANEOUSLY ACCEPTOR (ZN+) AND DONOR (SE+) ION-IMPLANTED GAAS

被引：9

作者：

MAKITA, Y

NOMURA, T

KUDO, K

IRIE, K

OHNISHI, N

TAKEUCHI, Y

TANAKA, H

TANOUE, H

MITSUHASHI, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.337616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：442 / 444

页数：3

相关论文

共 14 条

[11]

NOMURA T, UNPUB

[12]

OHNISHI N, UNPUB

[13] OBSERVATION OF NEW COMMON EMISSIONS IN GAAS PRODUCED BY ION-IMPLANTATION OF 4 ACCEPTOR IMPURITIES [J].

TAKEUCHI, Y ;

MAKITA, Y ;

KUDO, K ;

NOMURA, T ;

TANAKA, H ;

IRIE, K ;

OHNISHI, N .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :59-61

[14] EXCITATION-DEPENDENT EMISSION IN MG-IMPLANTED, BE-IMPLANTED, CD-IMPLANTED, AND ZN-IMPLANTED GAAS [J].

YU, PW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) :5043-5051