ELECTRICAL ENDPOINT DETECTION OF VLSI CONTACT PLASMA-ETCHING

[1] BRUCE RH, 1981, SOLID STATE TECHNOL, V24, P64

[2] Coburn J.W., 1982, PLASMA CHEM PLASMA P, V2, P1, DOI 10.1007/BF00566856

[3] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[4] ILIC DB, 1981, REV SCI INSTRUM, V52, P1542, DOI 10.1063/1.1136465

[5] KLEINKNECHT HP, 1978, J ELECTROCHEM SOC, V125, P798, DOI 10.1149/1.2131551

[6] APPLICATION OF RF DISCHARGES TO SPUTTERING [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 168 - &

[7] MARCOUX PJ, 1981, SOLID STATE TECHNOL, V24, P115

[8] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803

[9] MOGAB CJ, 1983, VLSI TECHNOLOGY

[10] OKANO H, UNPUB JAPAN J APPL P

[1] BRUCE RH, 1981, SOLID STATE TECHNOL, V24, P64

[2] Coburn J.W., 1982, PLASMA CHEM PLASMA P, V2, P1, DOI 10.1007/BF00566856

[3] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[4] ILIC DB, 1981, REV SCI INSTRUM, V52, P1542, DOI 10.1063/1.1136465

[5] KLEINKNECHT HP, 1978, J ELECTROCHEM SOC, V125, P798, DOI 10.1149/1.2131551

[6] APPLICATION OF RF DISCHARGES TO SPUTTERING [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 168 - &

[7] MARCOUX PJ, 1981, SOLID STATE TECHNOL, V24, P115

[8] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803

[9] MOGAB CJ, 1983, VLSI TECHNOLOGY

[10] OKANO H, UNPUB JAPAN J APPL P