ELECTRICAL ENDPOINT DETECTION OF VLSI CONTACT PLASMA-ETCHING

[11] MONITORING OF DRY ETCHING PROCESS OF SIO2 ON SI BY USING MASS-SPECTRA [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (03) : 579 - 580

[12] MASS-SPECTROMETRIC STUDY OF PLASMA ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 205 - 208

[13] A LASER INTERFEROMETER SYSTEM TO MONITOR DRY ETCHING OF PATTERNED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 655 - 658

[14] TRETOLA AR, 1980, P ELECTROCHEM SOC M, P1

[15] GLOW-DISCHARGE PHENOMENA IN PLASMA ETCHING AND PLASMA DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 319 - 324

[11] MONITORING OF DRY ETCHING PROCESS OF SIO2 ON SI BY USING MASS-SPECTRA [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (03) : 579 - 580

[12] MASS-SPECTROMETRIC STUDY OF PLASMA ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 205 - 208

[13] A LASER INTERFEROMETER SYSTEM TO MONITOR DRY ETCHING OF PATTERNED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 655 - 658

[14] TRETOLA AR, 1980, P ELECTROCHEM SOC M, P1

[15] GLOW-DISCHARGE PHENOMENA IN PLASMA ETCHING AND PLASMA DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 319 - 324