DEGRADATION MECHANISMS INDUCED BY HIGH-CURRENT DENSITY IN AL-GATE GAAS-MESFETS

被引：9

作者：

CANALI, C

FANTINI, F

SCORZONI, A

UMENA, L

ZANONI, E

机构：

[1] TELETTRA SPA, DEPT RELIABIL & QUAL, I-20059 VIMERCATE, ITALY

[2] UNIV BOLOGNA, DIPARTIMENTO INFORMAT & SISTEMIST, I-40136 BOLOGNA, ITALY

[3] CNR, LAMEL, I-40126 BOLOGNA, ITALY

[4] UNIV BARI, DIPARTIMENTO ELETTROTECN & ELETTR, I-70125 BARI, ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期

关键词：

D O I：

10.1109/T-ED.1987.22908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：205 / 211

页数：7

共 19 条

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