SCHOTTKY CONTACT BARRIER HEIGHT MODIFICATION BY ION-IMPLANTATION OF AL INTO GAAS

被引：8

作者：

AINA, O

PANDE, KP

机构：

来源：

关键词：

D O I：

10.1063/1.334162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1717 / 1721

页数：5

共 22 条

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LEIKIN, VN
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[7] LOW-TEMPERATURE INTERDIFFUSION BETWEEN ALUMINUM THIN-FILMS AND GAAS
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DAY, HM
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4217 - 4219
[8] EDEN RC, 1982, P IEEE, V7, P5
[9] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS
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