CARRIER TRANSPORT IN DOUBLE-HETEROSTRUCTURE ACTIVE LAYERS

被引：46

作者：

JOYCE, WB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 11期

关键词：

D O I：

10.1063/1.331621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7235 / 7239

页数：5

共 25 条

[1] SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES [J].

ASBECK, P .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :820-822

[2] LATERAL-MODE BEHAVIOR IN NARROW STRIPE LASERS [J].

ASBECK, PM ;

CAMMACK, DA ;

DANIELE, JJ ;

KLEBANOFF, V .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :727-733

[3]

D'Asaro L. A., 1973, Journal of Luminescence, V7, P310, DOI 10.1016/0022-2313(73)90073-2

[4] (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS - COMPARISON OF DEVICES FABRICATED WITH DEEP AND SHALLOW PROTON-BOMBARDMENT [J].

DIXON, RW ;

JOYCE, WB .

BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (06) :975-985

[5] CURRENT THRESHOLDS IN STRIPE-CONTACT INJECTION LASERS [J].

DUMKE, WP .

SOLID-STATE ELECTRONICS, 1973, 16 (11) :1279-1281

[6] CALCULATED TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT OF GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS [J].

DUTTA, NK .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :70-73

[7] CURRENT DENSITY DISTRIBUTION ACROSS PN JUNCTION OF A PARTIALLY CONTACTED DIODE AT HIGH FORWARD BIAS [J].

FULOP, W .

SOLID-STATE ELECTRONICS, 1971, 14 (01) :77-&

[8] CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS [J].

HAKKI, BW .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) :5021-5028

[9] GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG JUNCTION PLANE [J].

HAKKI, BW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :292-302

[10] ANALYTIC APPROXIMATIONS FOR FERMI ENERGY OF AN IDEAL FERMI GAS [J].

JOYCE, WB ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :354-356

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