SPATIAL-DISTRIBUTION OF HIGH-FIELD DOMAINS IN GAAS-ALAS SUPERLATTICES

被引：2

作者：

GRAHN, HT

SCHNEIDER, H

VONKLITZING, K

机构：

[1] Max-Planck-Institut für Fextkörperforxchung, Heisenbergstrasse I

来源：

SURFACE SCIENCE | 1990年 / 228卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90264-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electric high-field domains of undoped GaAsAlAs superlatticcs inside a p-i-n diode configuration have been investigated by photocurrent-voltage characteristics and by photoluminescence spectroscopy. The space-charge is produced by strong illumination above the bandgap of the GaAs wells. The photocurrent-voltage characteristics show clear evidence for high-field domain formation. Photoluminescence spectroscopy was used to characterize the domains and determine their spatial distribution for an external bias in reverse direction. Some results on domain formation in forward bias are also discussed. © 1990.

引用

页码：84 / 87

页数：4

共 11 条

[1] SEQUENTIAL SCREENING LAYERS IN A PHOTOEXCITED IN1-XGAXAS/INP SUPERLATTICE [J].

CAVICCHI, RE ;

LANG, DV ;

GERSHONI, D ;

SERGENT, AM ;

TEMKIN, H ;

PANISH, MB .

PHYSICAL REVIEW B, 1988, 38 (18) :13474-13477

[2] MULTIPLE QUANTUM-WELL 10-MU-M GAAS/ALXGA1-XAS INFRARED DETECTOR WITH IMPROVED RESPONSIVITY [J].

CHOI, KK ;

LEVINE, BF ;

BETHEA, CG ;

WALKER, J ;

MALIK, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (25) :1814-1816

[3] PERIODIC NEGATIVE CONDUCTANCE BY SEQUENTIAL RESONANT TUNNELING THROUGH AN EXPANDING HIGH-FIELD SUPERLATTICE DOMAIN [J].

CHOI, KK ;

LEVINE, BF ;

MALIK, RJ ;

WALKER, J ;

BETHEA, CG .

PHYSICAL REVIEW B, 1987, 35 (08) :4172-4175

[4] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J].

ESAKI, L ;

CHANG, LL .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :495-498

[5] OPTICAL-DETECTION OF HIGH-FIELD DOMAINS IN GAAS ALAS SUPERLATTICES [J].

GRAHN, HT ;

SCHNEIDER, H ;

VONKLITZING, K .

APPLIED PHYSICS LETTERS, 1989, 54 (18) :1757-1759

[6] INTERSUBBAND EMISSION FROM SEMICONDUCTOR SUPERLATTICES EXCITED BY SEQUENTIAL RESONANT TUNNELING [J].

HELM, M ;

ENGLAND, P ;

COLAS, E ;

DEROSA, F ;

ALLEN, SJ .

PHYSICAL REVIEW LETTERS, 1989, 63 (01) :74-77

[7] CURRENT OSCILLATION RELATED TO N=3 SUBBAND LEVELS UP TO ROOM-TEMPERATURE IN INGAAS INALAS MQW DIODES [J].

KAWAMURA, Y ;

WAKITA, K ;

OE, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10) :L1603-L1605

[8] OBSERVATION OF ROOM-TEMPERATURE CURRENT OSCILLATION IN INGAAS/INALAS MQW PIN DIODES [J].

KAWAMURA, Y ;

WAKITA, K ;

ASAHI, H ;

KURUMADA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (11) :L928-L930

[9] RESONANT AND NON-RESONANT TUNNELING IN GAAS/ALAS MULTI QUANTUM WELL STRUCTURES [J].

SCHNEIDER, H ;

VONKLITZING, K ;

PLOOG, K .

SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (03) :383-396

[10] SEQUENTIAL RESONANT TUNNELING CHARACTERISTICS OF ALAS/GAAS MULTIPLE-QUANTUM-WELL STRUCTURES [J].

TARUCHA, S ;

PLOOG, K .

PHYSICAL REVIEW B, 1988, 38 (06) :4198-4204

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