ELECTRICAL AND PHOTO-LUMINESCENCE PROPERTIES OF GE-DOPED N-TYPE GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：7

作者：

LI, AZ

XIN, SH

MILNES, AG

机构：

[1] CORNELL UNIV,ITHACA,NY 14853

[2] CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 01期

关键词：

D O I：

10.1007/BF02651636

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：71 / 91

页数：21

共 34 条

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