OPTIMUM SEMICONDUCTORS FOR HIGH-FREQUENCY AND LOW-NOISE MESFET APPLICATIONS

被引：7

作者：

GOLIO, JM

TREW, RJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 10期

关键词：

D O I：

10.1109/T-ED.1983.21312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1411 / 1413

页数：3

共 13 条

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