EXCESS VACANCY GENERATION IN SILICON DURING SURFACE SILICIDE FORMATION

被引：12

作者：

ITALYANTSEV, AG ^{[1
]}

KUZNETSOV, AY ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST MICROELECTR TECHNOL & SUPERPURE MAT,CHERNOGOLOVKA 142432,RUSSIA

来源：

APPLIED SURFACE SCIENCE | 1993年 / 73卷

关键词：

D O I：

10.1016/0169-4332(93)90167-A

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A model for vacancy injection into a silicon wafer during surface silicide formation is proposed. It was found theoretically, that for the typical silicide growth rates, and temperatures of 600-700 degrees C, the excess over the equilibrium concentration C-v(*) can reach values of (10(6)-10(7)) C-v(*), which in turn was confirmed experimentally using data on Sb redistribution in silicon underlying a vanadium-silicide contact.

引用

页码：203 / 208

页数：6

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