ELECTRON-IRRADIATION EFFECTS IN PARA-TYPE GAAS

被引:30
作者
LOUALICHE, S [1 ]
NOUAILHAT, A [1 ]
GUILLOT, G [1 ]
GAVAND, M [1 ]
LAUGIER, A [1 ]
BOURGOIN, JC [1 ]
机构
[1] UNIV PARIS 07,ECOL NORM SUPER,PHYS SOLIDES GRP,F-75221 PARIS 05,FRANCE
关键词
D O I
10.1063/1.330467
中图分类号
O59 [应用物理学];
学科分类号
摘要
22
引用
收藏
页码:8691 / 8696
页数:6
相关论文
共 22 条
[1]   TRANSPORT AND PHOTOELECTRICAL PROPERTIES OF GALLIUM-ARSENIDE CONTAINING DEEP ACCEPTORS [J].
BROWN, WJ ;
BLAKEMOR.JS .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2242-&
[2]   SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1977, 16 (02) :790-796
[3]   DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].
CHANTRE, A ;
VINCENT, G ;
DUBOIS .
PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359
[4]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[5]  
GUILLOT G, 1981, I PHYS C, V59, P313
[6]  
HILSUM C, 1975, PROGR SEMICOND, V9, P173
[7]  
KOLCHENKO TI, 1975, SOV PHYS SEMICOND+, V9, P1153
[8]  
Lang D. V., 1977, I PHYS C SER, V31, P70
[9]   DEEP-LEVEL DISTRIBUTIONS NEAR P-N-JUNCTIONS IN LPE GAAS [J].
LANG, DV ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1533-1537
[10]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032