CHARACTERIZATION OF AMORPHOUS SELENIUM SUBLAYERS IN CHALCOGENIDE SUPERLATTICES BY RAMAN-SCATTERING

被引：8

作者：

IONOV, R ^{[1
]}

NESHEVA, D ^{[1
]}

机构：

[1] BULGARIAN ACAD SCI,INST SOLID STATE PHYS,BU-1784 SOFIA,BULGARIA

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 82卷 / 12期

关键词：

D O I：

10.1016/0038-1098(92)90728-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of both interfaces and tellurium additives on the a-Se sublayers structure in Se/CdSe and SeTe/CdSe superlattices (SL) is studied. It is demonstrated that the laminar SL structure is related with the preference to the Se polymer chains modification. The interfacial induced root mean square bond angle deviations are evaluated. It is established that the energy stored in these deviations in a-Se based SL is lower than that for a-Si based SL.

引用

页码：959 / 962

页数：4

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