ESCA SURFACE STUDIES OF PB1-XSNXTE DEVICES

被引：18

作者：

GRANT, RW ^{[1
]}

PASKO, JG ^{[1
]}

LONGO, JT ^{[1
]}

ANDREWS, AM ^{[1
]}

机构：

[1] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.569026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：940 / 947

页数：8

共 16 条

[1]

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[2]

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[3]

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[4]

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[5] LOW-CARRIER-CONCENTRATION LIQUID EPITAXIAL PB 1-X SNX TE [J].

LONGO, JT ;

GERTNER, ER ;

JOSEPH, AS .

APPLIED PHYSICS LETTERS, 1971, 19 (06) :202-&

[6] EVALUATION OF PB0.8SN0.2TE DETECTOR FABRICATION USING SURFACE ANALYSIS [J].

LONGSHORE, R ;

JASPER, M ;

SUMNER, B ;

LOVECCHIO, P .

INFRARED PHYSICS, 1975, 15 (04) :311-315

[7]

MARGENAU H, 1956, MATHEMATICS PHYSICS, pCH13

[8] ELECTRICAL PROPERTIES OF SURFACE LAYERS ON CDTE CRYSTALS [J].

MONTGOMERY, HC .

SOLID-STATE ELECTRONICS, 1964, 7 (02) :147-152

[9]

NOBEL DD, 1958, Patent No. 2822299

[10] AN ELECTROLYTIC POLISH AND ETCH FOR LEAD TELLURIDE [J].

NORR, MK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (05) :433-434

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