SINGLE-ELECTRON COULOMB BLOCKADE IN A NANOMETER FIELD-EFFECT TRANSISTOR WITH A SINGLE BARRIER

被引：14

作者：

CHOU, SY

WANG, Y

机构：

[1] Department of Electrical Engineering, University of Minnesota, Minneapolis

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 13期

关键词：

D O I：

10.1063/1.107506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The first experimental study of a new nanometer field-effect transistor with a single barrier in its one-dimensional channel is presented. At low temperatures and as charge density in the channel was varied, nine reproducible periodic oscillations of conductance, in addition to 2e2/h conductance plateaus, were observed before the onset of the first 2e2/h conductance plateau. It was found experimentally that each conductance oscillation corresponds to the Coulomb blockade of a single electron in the one-dimensional channel. A model that describes the operation of the new single electron transistor is suggested.

引用

页码：1591 / 1593

页数：3

共 8 条

[1] DOUBLE 15-NM-WIDE METAL GATES 10 NM APART AND 70 NM THICK ON GAAS [J].