THE EFFECT OF HIGH CHARGE STATES ON THE STOPPING AND RANGES OF IONS IN SOLIDS

被引：37

作者：

BIERSACK, JP

机构：

[1] Hahn-Meitner-Institut Berlin, W-1000 Berlin 39

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷 / pt 2期

关键词：

D O I：

10.1016/0168-583X(93)96065-K

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Recently, new types of ion sources have been developed which can deliver ions with extremely high charge states, for example Xe(q+) with q almost-equal-to 30 in ECR sources, and q almost-equal-to 44 in an EBIT source. Therefore, it becomes important to assess the influence of high charge states on the stopping and ranges, as well as on sputtering and damage production. In a first series of experiments, the ranges of 308 keV Xe(q+), q = 1-44, in SiO2 and Si were measured, and shall find their interpretation in the present theoretical treatment of nuclear and electronic stopping powers.

引用

页码：12 / 15

页数：4

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