HIGH-SENSITIVITY AND HIGH-GAIN OPTICAL FUNCTIONAL DEVICE - TRIANGULAR-BARRIER OPTOELECTRONIC SWITCH (TOPS)

被引：10

作者：

SAKATA, H

UTAKA, K

MATSUSHIMA, Y

机构：

[1] KDD R&D Laboratories, Kumifukuoka-shi, Saitaina 356

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 21期

关键词：

OPTOELECTRONIC DEVICES; PHOTOTRANSISTORS;

D O I：

10.1049/el:19941179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel optical functional device, the triangular-barrier optoelectronic switch (TOPS) is reported, which consists of a triangular-barrier phototransistor with avalanche multiplication. Clear differential gain, bistability and latch characteristics with high sensitivity and high gain were obtained by only changing the bias voltages.

引用

页码：1792 / 1793

页数：2

共 5 条

[1] MODULATED BARRIER PHOTO-DIODE - A NEW MAJORITY-CARRIER PHOTODETECTOR
CHEN, CY
CHO, AY
GARBINSKI, PA
BETHEA, CG
LEVINE, BF
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[2] GAAS/INGAAS/ALGAAS OPTOELECTRONIC SWITCH IN AVALANCHE HETEROJUNCTION PHOTOTRANSISTOR VERTICALLY INTEGRATED WITH A RESONANT-CAVITY
HUANG, FY
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (04) : 405 - 407
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MAND, RS
ASHIZAWA, Y
NAKAMURA, M
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[4] A NEW DOUBLE HETEROSTRUCTURE OPTOELECTRONIC SWITCHING DEVICE USING MOLECULAR-BEAM EPITAXY
TAYLOR, GW
SIMMONS, JG
CHO, AY
MAND, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 596 - 600
[5] OPTICALLY INDUCED SWITCHING IN A P-CHANNEL DOUBLE HETEROSTRUCTURE OPTOELECTRONIC SWITCH
TAYLOR, GW
MAND, RS
SIMMONS, JG
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1406 - 1408

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